Formation of Zinc Oxide Thin Films by the Thermal Decomposition of Zinc Acetate

Abstract

The thermal decomposition of basic zinc acetate (Zn4O(CH3COO)6) leading to the formation of zinc oxide films has been examined using X-ray Photoelectron Spectroscopy (XPS). The chemical changes in the precursor film deposited on room temperature polycrystalline copper substrates were monitored as a function of substrate heating to determine the optimum conditions for ZnO film formation. The chemical transformation of the precursor is not complete until a temperature of 350{\textdegree}C is attained. The growth rate of ZnO films (10 --- 200 Åin thickness) was dependant on preheated substrate temperatures. Analysis of films that were grown on substrates heated to 400{\textdegree}C were found to contain less than 4% atomic carbon incorporated in the bulk of the films.