Modeling of carbon nanotube interconnects

Abstract

Modeling of a carbon nanotube interconnect is primarily dependent on its diameter, electron transport properties, chiralities, metallic and semiconducting properties. This chapter presents a technical review of analytical models for single-walled (SWNT), double-walled (DWNT), and multi-walled CNT (MWNT) structures. Depending on the geometry, the equivalent electrical models and the associated resistive, inductive, and capacitive parasitics for different SWNT, DWNT, and MWNT bundles are described.