Electron transport in InAs/AlGaSb ballistic rectifiers

Abstract

Nonlinear transport properties of a ballistic rectifier fabricated from InAs/AlGaSb heterostructures are reported. The operation of the ballistic rectifier is based on the guidance of carriers by a square anti-dot structure. The structure was defined by electron beam lithography and wet chemical etching. The DC characteristics and magneto-transport properties of the ballistic rectifier have been measured at 77 K and 4.2 K. Rectification effects relying on the ballistic transport were observed. From the four-terminal resistance measured at low magnetic fields, we also observed magneto-resistance fluctuations corresponding to the electron trajectories and symmetry-breaking electron scattering, which are influenced by the magnetic field strength. © 2006 IOP Publishing Ltd.