This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH 3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650°C and >3 × 10 5, respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∼0.3 nm on 2 μm × 2 μm area, while the RMS roughness of the InN film grown on GaN/Si (111) templates is found as ∼0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN (0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.
CITATION STYLE
Jamil, M., Arif, R. A., Ee, Y. K., Tong, H., Higgins, J. B., & Tansu, N. (2008). MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates. Physica Status Solidi (A) Applications and Materials Science, 205(7), 1619–1624. https://doi.org/10.1002/pssa.200723591
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