Abstract
This abstract reports the realization of p-type conduction in Sb (5 at.%): Mg0.10Zn0.90O (SMZO) grown in different growth ambient and then fabrication of SMZO/n-Si based UV heterojunction photodetector grown by dual ion beam sputtering (DIBS) system. The fabricated photodetectors were then probed for the effect of growth ambient using current–voltage (I–V) and photoresponse measurement on photodetector properties.
Cite
CITATION STYLE
Bhardwaj, R., Sharma, P., Khan, M. A., Singh, R., & Mukherjee, S. (2019). Mgzno based uv heterojunction photodetector fabricated using dual ion beam sputtering. In Springer Proceedings in Physics (Vol. 215, pp. 981–984). Springer Science and Business Media, LLC. https://doi.org/10.1007/978-3-319-97604-4_149
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
