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Negative and Positive Magnetoresistance in Variable-Range Hopping Regime of Undoped AlxIn1−xSb/InSb Quantum Wells

  • Ishida S
  • Manago T
  • Oto K
  • et al.
Springer Netherlands, (2008), 203-207
DOI: 10.1007/978-1-4020-8425-6_47
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Abstract

Low-temperature magnetoresistance (MR) in the variable-range hopping (VRH) regime of undoped AlxIn1-xSb/InSb quantum wells was studied. The low-T resistance shows that the two dimensional (21)) Mott VRH crossovers to EfrosShklovskii (ES) VRH due to the Coulomb interaction with lowering T. The anisotropic negative MR in weak magnetic fields was explained by the quantum interference in the VRH. The in-plane positive

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Ishida, S., Manago, T., Oto, K., Fujimoto, A., Geka, H., Okamoto, A., & Shibasaki, I. (2008). Negative and Positive Magnetoresistance in Variable-Range Hopping Regime of Undoped AlxIn1−xSb/InSb Quantum Wells. In Narrow Gap Semiconductors 2007 (pp. 203–207). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8425-6_47

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