We treat the basis of bipolar semiconductor lasers. We discuss: condition of gain; joint density of states; gain coefficient; laser equation; bipolar character of the active medium. And we derive, by use of Planck’s radiation law, the Einstein coefficients for an ensemble of two-level systems that is governed by Fermi’s statistics.
CITATION STYLE
Renk, K. F. (2017). Basis of a Bipolar Semiconductor Laser (pp. 427–455). https://doi.org/10.1007/978-3-319-50651-7_21
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