Nanowire-based ternary transistor by threshold-voltage manipulation

Abstract

We report on a ternary device consisting of two nanowire channels that have different threshold voltage (Vth) values and show that three current stages can be produced. A microscale laser-beam shot was utilized to selectively anneal the nanowire channel area to be processed, and the amount of Vth shift could be controlled by adjusting the laser wavelength. Microscale laser annealing process could control Vth of the individual nanowire transistors while maintaining the other parameters the constant, such as the subthreshold slope, on-off current ratio, and mobility. This result could provide a potential for highly integrated and high-speed ternary circuits. © 2014 AIP Publishing LLC.