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EPITAXIAL GROWTH OF SILICON CARBIDE BY CHEMICAL VAPOR DEPOSITION.

DOI: 10.1007/978-3-540-74761-1_28
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Abstract

Alpha-silicon carbide was grown on the alpha substrates from the silane-propane-hydrogen system. Optimum results in terms of crystalline perfection and electrical characteristics were obtained by growing on the Si (0001) substrate surfaces at 1600 degree C employing a Si/C ratio greater than one. The epitaxial growth of SiC was found to be an activated process best described by adsorption-desorption kinetics.

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Wessels, B., Gatos, H. C., & Witt, A. F. (1974). EPITAXIAL GROWTH OF SILICON CARBIDE BY CHEMICAL VAPOR DEPOSITION. (pp. 25–32). Univ of SC Press. https://doi.org/10.1007/978-3-540-74761-1_28

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