Investigation of localization effect in GaN-rich InGaN alloys and modified band-tail model

Abstract

The temperature-dependent PL properties of GaN-rich InxGa 1-xN alloys is investigated and S-shaped temperature dependence is observed in all InGaN samples. It is found that the origin of localization effect in samples A and B are different from that in sample C. For samples A and B, In content fluctuations should be the origin of localization effect, while the localization effect can be attributed to In-rich clusters and metallic indium inclusions for sample C. In addition, the band-tail model is modified and the modified band-tail model is used to investigate the degree of localization effect in the three samples. © Indian Academy of Sciences.