Study of defects in β-Ga2O3 by isothermal capacitance transient spectroscopy

Abstract

The authors use isothermal capacitance transient spectroscopy to detect three deep defects located at approximately 0.6, 0.8, and 1.0 eV below the conduction band of β-Ga2O3 materials. The electrical properties of these defects such as their capture cross sections and concentrations are characterized, and their potentially adverse effects on power electronic devices are discussed. Because the isothermal capacitance transient spectroscopy method is implementable by instruments intended for steady-state capacitance-voltage measurement, it is promising for use as an effective characterization and monitoring tool for deep defects in β-Ga2O3 and other wide bandgap semiconductors.