Study of varying tubes in carbon nanotube FET based inverter

Abstract

In today’s era, Carbon Nanotubes (CNT) are becoming more popular than CMOS due to its electrical and mechanical properties. The devices using Carbon Nanotube FET’s (CNTFET) provide fast switching, high electron mobility, high current density as well as high transconductance. In this paper a Stanford Leland junior universities standard mode of CNTFET is used for implementing HSPICE. This work involves study of varying number of nanotubes in CNTFET based inverter. Initially the optimization for gate oxide thickness with number of nanotubes has been done. The optimized result shows that maximum average output power of 2.0503 μW is observed with gate oxide thickness of 4 nm and 40 nanotubes. These optimized parameters were used to study effect on varying number of CNT on gain of CNT based inverter. The study reveals that increasing number of CNT’s does not affect on the gain.