Solution-Processed Insulators for Flexible Metal-Insulator-Metal Structures

Abstract

Repeatable switching hysterisis in metal-insulator-metal devices is commonly attributed to the motion of oxygen vacancies under a sufficiently large external electric field. The resulting memristive behaviour has become a compelling alternative to traditional non-volatile memory device architectures. A room-temperature process for the fabrication of a metal-insulator-metal structure employing niobium pentaoxide (Nb 2O 5) as the active layer has been developed, without any annealing of the oxide film. Electrical characterization of the devices shows sharp switching of resistivity. The developed process is very simple, cost-effective and can be implemented on flexible substrates.