Graphene terahertz devices

Abstract

In this section, recent advances and future trends in graphene terahertz (THz) devices are described. First, the fundamental basis of optoelectronic properties of graphene is introduced. Second, ultrafast nonequilibrium carrier dynamics in optically pumped graphene is described, giving rise to population inversion and resultant THz gain by stimulated interband photon emission. Third, graphene active plasmonics are described in which plasmon dispersion and modes are theoretically addressed, leading to one important aspect of giant THz gain by stimulated interband photon emission in inverted graphene. Fourth, science and technology toward the creation of current-injection-pumped graphene THz lasers are described. Fifth, some other important functional devices including THz modulators and photodetectors/mixers are described. Finally, trends and the future of graphene THz devices are summarized.