A nanomechanical resonator from HSQ fabricated by FIB/EB dual beam lithography

Abstract

Nanomechanical resonator fabrication from HSQ using FIB and EB lithography has been investigated. Suspended structures of nanomechanical resonators are patterned by FIB lithography and their supporting structures are patterned by EB lithography. The annealing process is required to transform HSQ to SiO 2-like material to harden the structure. In case of doubly clamped mechanical resonators, the annealing process causes shrinkage of HSQ and induces tensile stress in the mechanical resonators to enhance their dynamic performance. Young's modulus of the materials, induced strains and dynamics of the resonators have been investigated at different annealing temperatures 400, 700 and 1000 °C. 60 - 70 GPa of Young's moduls and 0.28% of tensile strain are confirmed at 1000 °C. The natural frequency and quality factor are significantly improved by annealing treatment at 1000 °C. © 2012 CPST.