Catalytic synthesis of ZnO nanorods on patterned silicon wafer-An optimum material for gas sensor

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Abstract

ZnO nanorods have been synthesized over etch-patterned Si (110) wafer using annealed silver thin film as growth catalyst. The growth of ZnO nanorods were performed by a two-step process. Initially, the deposition of Zn thin film was done on the annealed silver catalyst film over etch-patterned Si (110) substrate by thermal evaporation, and then annealed at 800°C in air. The etching of the patterned Si (110) wafers was carried out by 50% aqueous KOH solution. The samples were investigated by optical microscopy, scanning electron microscopy, X-ray diffraction, Raman spectroscopy and room temperature photoluminescence spectroscopy. 'V' shaped grooves with no undercut were formed after etching due to the anisotropic nature of the KOH etchant. The etch-patterned wafer was used to provide larger surface area for ZnO growth by forming 'V'-grooves. This ZnO film may be predicted as a very good material for gas sensor. © Indian Academy of Sciences.

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Panda, S. K., & Jacob, C. (2009). Catalytic synthesis of ZnO nanorods on patterned silicon wafer-An optimum material for gas sensor. Bulletin of Materials Science, 32(5), 493–498. https://doi.org/10.1007/s12034-009-0073-1

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