Unfolding the threshold switching behavior of a memristor

Abstract

Employing a mathematical model based upon Chua’s unfolding theorem, some aspects of the nonlinear dynamics of a thermally-activated micro-scale NbOx/Nb2O5 volatile memristor were modeled. Insights into the peculiar behavior of the device are gained through experiments and model-based simulations. Particularly, this enables us to reproduce its threshold switching behavior under quasi-static excitation, and to explain under which conditions the off-to-on switching is accompanied by the appearance of a negative differential resistance region on its current-voltage characteristic.