Hydride vapor phase epitaxy of GaN

Abstract

Hydride vapor phase epitaxy (HVPE) is the growth method known for a long time, where a halide vapor precursor, such as GaCl, and a hydride, such as NH3, are used as the group III and the group V precursors, respectively. HVPE growth can achieve a high growth rate and a high crystal quality due to thermal stability of a halide source, the use of high purity starting materials without containing carbon, and a high surface migration of halide molecules. Therefore, HVPE growth attracts attention as a thick film growth method.