Using 100% industrial fabrication processes, the design and the fabrication of a monolithic CMOS MEMS magnetic field sensor, targeting noise reduction, are developed in this paper. The sensor is based on a resonant cantilever structure with optimized electronics for signal treatment and noise filtering in order to achieve competitive performances. With a final sensitivity of 350Vrms/T and a 2μT resolution, the system is able to measure earth natural magnetic field.
CITATION STYLE
Beroulle, V., Bertrand, Y., Latorre, L., & Nouet, P. (2002). Noise optimisation of a piezoresistive CMOS MEMS for magnetic field sensing (pp. 461–472). https://doi.org/10.1007/978-0-387-35597-9_39
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