Enhancement of band edge luminescence in ZnSe nanowires

Abstract

In order to realize the full potential of nanowires for optical applications, it is essential to synthesize nanowires that can emit predominantly via band to band or band edge (BE) transitions. However, many compound semiconductor nanowires, irrespective of the method of their growth, contain a high density of native defects; these result in competing deep defect (DD) related emission, limiting their utility for optoelectronic device applications. The concentration of these native defect states depends on the gas phase stoichiometry. In this work, we report on the influence of gas phase stoichiometry on the structural and optical properties of single crystal zinc selenide (ZnSe) nanowires. We find that nanowires grown under stoichiometric conditions contain such defect states with associated weak BE emission and strong DD emission. However, nanowires grown under Zn-rich conditions were characterized by photoluminescence spectra dominated by strong BE emission while those grown under Se-rich conditions showed strong DD related emission. Hence, it is necessary to develop a strategy for enhancing the BE emission while simultaneously quenching the DD emission. We demonstrate a technique of postgrowth treatment that can effectively perform this function, and using this strategy the ratio of the BE/DD emission can be increased by a factor of several thousands, at least an order of magnitude higher than previously reported values. This reveals BE dominated photoluminescence in these nanowires and makes these nanowires suitable for developing future optoelectronic devices. © 2006 American Institute of Physics.