In this work, we have studied the effect of variation in length of GaN gate with p-type doping concentration on the DC performances of AlGaN/GaN normally-off HEMT using 2D Atlas TCAD simulator. A comprehensive simulation is undertaken on the proposed device to examine different performance parameters such as drain current, transconductance factor, energy band diagram, and surface potential with respect to change in p-type GaN gate lengths. The gate lengths are varied from 60 to 90 nm, and it is noticed from the simulation results that with a decrease in gate length the drain current increases and transconductance increases. A proper optimization of gate length is indispensable to preserve the normally-off mode operation and at the same time enhancing certain performance parameters.
CITATION STYLE
Swain, S. K., Biswal, S. M., Nanda, U., Patro, D. S., Nayak, S. K., & Biswal, B. (2019). Impact of p-GaN gate length on performance of AlGaN/GaN normally-off HEMT devices. In Lecture Notes in Electrical Engineering (Vol. 521, pp. 803–809). Springer Verlag. https://doi.org/10.1007/978-981-13-1906-8_81
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