Electronic Properties of Dilute Bismides

Abstract

In this chapter, electronic properties of dilute bismide III-V semiconductors are reviewed briefly. Theoretical and computational methods are collected and discussed extensively. Empirical models, including tight-binding (TB) model, band anti-crossing (BAC), valance band anti-crossing (VBAC), and k·p model, have been widely applied in calculations of electronic properties of dilute bismide III-V materials. First-principle methods have also been used to investigate many kinds of Bi-containing compounds, such as models of bulk, surface, and nanostructure. Several combined methods are also reviewed.