GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy

Abstract

Thin GaInN and GaN films were grown by molecular beam epitaxy on sapphire for multiple-quantum-well light-emitting diodes. The photoluminescence spectra of the films were examined at 600 °C and 50 sccm of NH3, 600 °C and 100 sccm of NH3, and 570 °C and 100 sccm of NH3. The photoluminescence and electroluminescence intensities of the quantum well structure were examined as a function of photon energy and wavelength, respectively, while transmission electron microscopy was used to analyze its structural characteristics.