The enhancement of anomalous Hall effect by inserting MgO layer in perpendicular anisotropic Pd/Co2MnSi/MgO/Pd films

Abstract

A systematic study of anomalous Hall effect (AHE) was performed in perpendicular magnetic anisotropic Pd/Co2MnSi(tCMS)/MgO/Pd films. The AHE was significantly intensified by inserting MgO layer, which can be ascribed to the enhancement of spin-orbit coupling and interfacial scattering contribution. Moreover, it was found that the Co and Mn ions were reduced at the interface of Co2MnSi/MgO with annealing process. The stable amount of Mn-O bonding was observed at the Co2MnSi/MgO interface after annealing, implying that the proper Mn-O bonding could be favorable for achieving large AHE.