Magnetoresistance of rippled graphene in a parallel magnetic field

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Abstract

The magnetoresistance of a monolayer graphene in a random magnetic field(RMF) with zero mean has been investigated. The RMF was produced by applying a magnetic field parallel to the graphene plane utilizing ripples. The magnetoresistance has shown the same magnetic field dependence and, unexpectedly, the same carrier density dependence as the conventional two-dimensional electron systems in random magnetic fields. The relation between the characteristic length of ripples and the magnitude of the magnetoresistance is discussed.

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APA

Wakabayashi, J., & Sano, T. (2011). Magnetoresistance of rippled graphene in a parallel magnetic field. In Journal of Physics: Conference Series (Vol. 334). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/334/1/012039

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