TEM characterization of dislocation image

Abstract

Dislocation is the most important defect of modern engineering materials involving structural and electronic application. Proper operation and understanding of dislocation also serve the basis for other characterization work. This paper deals with both underlying principles and practical aspects of dislocation characterization. Thin foil of electronic grade Cu is loaded into a double tilt specimen holder of Analytical TEM, JEOL JEM 1200EX. [001] Low Index Zone Axis was located with the aid of Kikuchi Lines. Two-Beam Condition was achieved for [ 200 ] [ 220 ] g vector. Bright Field and Dark Field Image of the Dislocation and their related Diffraction Patterns were taken at the Sample Edge. Dark field weak beam imaging has advantages in the accurate characterization of dislocations since the images produced by this technique meet all basic requirements for dislocation study.