We use a tight-binding Hamiltonian to investigate the variation of energy gap with nitrogen (N) composition in InSbN and GaSbN, including the effect on the energy gap due to a random configuration of N atoms. We find that the assumed distribution of N atoms does not significantly affect the calculated energy gap in InSbN. By contrast, the electronic properties of GaSbN are strongly dependent on the assumed N distribution, with N-related defect levels strongly perturbing the lowest conduction band states and energy gap.
CITATION STYLE
Lindsay, A., Andreev, A. D., O’Reilly, E. P., & Ashley, T. (2008). Band Structure of InSbN and GaSbN. In Narrow Gap Semiconductors 2007 (pp. 45–47). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8425-6_11
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