Epitaxial Lateral Overgrowth of Semiconductors

Abstract

The state of the art and recent developments of lateral overgrowth of compound semiconductors are epitaxial lateral overgrowth (ELO) of semiconductors epitaxial lateral overgrowth (ELO) reviewed. First we focus on the mechanism of epitaxial lateral overgrowth (ELO) from the liquid phase, highlighting the phenomena that are crucial for growing high-quality layers with large aspect ratio. Epitaxy from the liquid phase has been chosen since the equilibrium growth techniques such as liquid-phase epitaxy (LPE) are the most suitable for lateral overgrowth. We then present numerous examples for which the defect filtration in the ELO procedure is very efficient and leads to significant progress in the development of high-performance semiconductor devices made of lattice-mismatched structures. Structural perfection of seams that appear when layers grown from neighboring seeds merge is also discussed. Next, we concentrate on strain commonly found in various ELO structures and arising due to the interaction of ELO layers with the mask. Its origin, and possible ways of its control, are presented. Then we show that the thermal strain in lattice-mismatched ELO structures can be relaxed by additional tilting of ELO wings while still preserving their high quality. Finally, recent progresses in the lateral overgrowth of semiconductors, including new mask materials and liquid-phase electroepitaxial growth on substrates coated by electrically conductive masks, are presented. New versions of the ELO technique from solution and from the vapor (growth from ridges and pendeo-epitaxy) are described and compared with standard ELO. A wide range of semiconductors, including III–V compounds grown from solution and vapor-grown GaN, are used to illustrate phenomena discussed. Very often, the similar behavior of various ELO structures reveals that the phenomena presented are not related to a specific group of compounds or their growth techniques, but have a much more general nature.