The control of thermal effects becomes more and more important in modern semiconductor circuits like in the simplified CMOS transceiver representation described by U. Feldmann in the above article Numerical simulation of multiscale models for radio frequency circuits in the time domain. The standard approach for modeling integrated circuits is to replace the semiconductor devices by equivalent circuits consisting of basic elements and resulting in so-called compact models. Parasitic thermal effects, however, require a very large number of basic elements and a careful adjustment of the resulting large number of parameters in order to achieve the needed accuracy. © 2008 Springer-Verlag.
CITATION STYLE
Brunk, M., & Jüngel, A. (2008). Numerical simulation of thermal effects in coupled optoelectronic device-circuit systems. In Mathematics - Key Technology for the Future: Joint Projects Between Universities and Industry 2004-2007 (pp. 29–38). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-540-77203-3_4
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