The present research aims at developing a method for measuring particle sizes of order of nanometer (nm) on the raw Si wafer using a light-scattering method with Ar+ laser. According to the analysis for Mie and Rayleigh scattering theories, the measuring system is developed to detect the particle of nm order sizes with the ellipsoidal reflector collecting extremely weak light, the detected processing system, and the several optical instruments. Furthermore, a melting problem of the particle irradiated by the laser is clarified by analyzing the heat conduction to a particle theoretically. Consequently, it was verified theoretically that the measuring method developed in this study is applicable for detecting the nm order sizes nondestructively. © 1988, The Japan Society for Precision Engineering. All rights reserved.
CITATION STYLE
Mori, Y., Hiroshi, A., Endo, K., Yamauchi, K., Sugiyama, K., Tsuchiya, H., & Ide, T. (1988). Designing a New Apparatus for Measuring Particle Sizes of the Order of Nanometer by Light-Scattering. Journal of the Japan Society for Precision Engineering, 54(11), 2132–2137. https://doi.org/10.2493/jjspe.54.2132
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