Recently, LEDs based on heteroepitaxial GaN on Si substrates (GaN/Si) are attracting a great attention and are industrially developed by many companies in order to compete with LEDs based on GaN/sappire and GaN/SiC which are commercially marketed advancing GaN/Si LEDs, though GaN/Si LEDs have been realized early in 2002. The recent attention on GaN/Si is due the availability of low cost and large wafer size availability (up to 300 mm diameter) of Si substrates. In this article, we review the development of the GaN epitaxial growth on Si and summarize the development made in our laboratory including the device structures achieving the GaN/Si LEDs with higher emission efficiency. We describe on GaN/Si using (i) high-temperature (HT) AlN/AlGaN intermediate layers, (ii) HT intermediate layers (ILs) and multilayers (MLs), and (iii) strained-layer superlattices (SLS) interlayers and their LED performances, respectively. We believe that GaN/Si LEDs with low prices will become important LEDs for general lighting in the near future.
CITATION STYLE
Egawa, T., & Oda, O. (2017). LEDs based on heteroepitaxial GaN on Si substrates. In Topics in Applied Physics (Vol. 133, pp. 29–67). Springer Verlag. https://doi.org/10.1007/978-981-10-3755-9_3
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