Silicon Mode-Selective Switch via Horizontal Metal-Oxide-Semiconductor Capacitor Incorporated With ENZ-ITO

Abstract

A silicon mode-selective switch (MSS) is proposed by using a horizontal metal-oxide-semiconductor (MOS) capacitor incorporated with the epsilon-near-zero (ENZ) indium-tin-oxide (ITO). The carrier concentration of the double accumulation-layers in ITO can be adjusted via the applied gate-voltage to achieve the desired switching state. The MOS-type mode of the central MOS-capacitor based triple-waveguide coupler is introduced and optimised by using the full-vectorial finite element method to switch the “OFF” and “ON” states. The thickness of the accumulation layer and the optimal design are studied by using the 3D full-vectorial eigenmode expansion method. The optimised quasi-TE0 and quasi-TE1 modes based MSSes are with the extinction ratios of 28.52 dB (19.05 dB), 37.29 dB (17.8 dB), and 37.29 dB (23.7 dB), at “OFF” (“ON”) states for the accumulation-layer thicknesses of 1.5, 5.0, and 10.0 nm, respectively. The operation speed can achieve to be 6.3 GHz, 6.2 GHz, and 6.2 GHz for these three accumulation-layer thicknesses, respectively. The performance of the proposed MSS with a 2.5 V gate-voltage is also studied for preventing the oxide breakdown. The proposed MSS can be applied in the mode-division-multiplexing networks for signal switching and exchanging.