In this work, we focus on the optimization of small-area n + np + n-type silicon solar cells featuring an amorphous/crystalline silicon heterojunction (a-Si:H/c-Si SHJ) rear emitter. For cells with a locally c-Si(n ++ ) diffused high-low junction underneath the front side metallization and a full-area c-Si(n + ) diffused front surface field (FSF) in between, efficiencies of up to 20.6 % have been reached. It is shown by experiment and two-dimensional device simulation that when omitting the full-area c-Si(n + ) FSF a sufficient two-dimensional majority carrier transport via the base to the local c-Si(n ++ ) FSF can be secured. For the front side passivation of the c-Si base a stack of thermal SiO 2 / SiN x and Al 2 O 3 / SiN x was applied. © 2011 Published by Elsevier Ltd.
Bivour, M., Rüdiger, M., Reichel, C., Ritzau, K. U., Hermle, M., & Glunz, S. W. (2011). Analysis of the diffused front surface field of n-type silicon solar cells with a-Si/c-Si heterojunction rear emitter. In Energy Procedia (Vol. 8, pp. 185–192). Elsevier Ltd. https://doi.org/10.1016/j.egypro.2011.06.122