Analytical relationship between anion formation and carrier-trap statistics in chalcogenide glass films

Abstract

An analytical mapping for electron trapping in chalcogenide glass (ChG) films is derived which equates anion formation (dissolution) reactions and carrier-trap statistics. Glass binaries composed of chalcogen atoms contain high densities of negative charge that result from chemical reactions involving free electrons. This process of anion formation and dissolution between an electron and a neutral species is shown to be equivalent to standard models for carrier statistics. The derived equivalence reduces chemical reaction equations into statistics calculations performed through conventional semiconductor device simulation. The proposed mapping is shown to be valid for both equilibrium and steady state photogeneration conditions.