Formation of Ge Nanodots Capped with SiC Layer by Gas-Source MBE Using MMGe and MMSi

Abstract

Ge nanodots were formed on Si(001) 2˚-off substrates after formation of a Si-c(4×4) structure by gas-source molecular beam epitaxy using monomethylgermane as a source gas. Surface structures of the Ge nanodots were measured using reflection high-energy electron diffraction and scanning tunneling microscopy. Photoluminescence spectra of the Ge nanodots capped with SiC layers measured at low temperature exhibited intense peaks around 1.07 and 1.01 eV, which are considered to be originated from the Ge(GeCx) nanodots.