On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour

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Abstract

Molecular devices constructed by sub-10 nm thick molecular layers are promising candidates for a new generation of integratable nanoelectronic applications. Here, we report integrated molecular devices based on ultrathin copper phthalocyanine/fullerene hybrid layers with microtubular soft-contacts, which exhibit process-programmable functionality switching between photomultiplication and memristive behaviour. The local electric field at the interface between the polymer bottom electrode and the enclosed molecular channels modulates the ionic-electronic charge interaction and hence determines the transition of the device function. When ions are not driven into the molecular channels at a low interface electric field, photogenerated holes are trapped as electronic space charges, resulting in photomultiplication with a high external quantum efficiency. Once mobile ions are polarized and accumulated as ionic space charges in the molecular channels at a high interface electric field, the molecular devices show ferroelectric-like memristive switching with remarkable resistive ON/OFF and rectification ratios.

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APA

Li, T., Hantusch, M., Qu, J., Bandari, V. K., Knupfer, M., Zhu, F., & Schmidt, O. G. (2022). On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour. Nature Communications, 13(1). https://doi.org/10.1038/s41467-022-30498-y

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