Recovery of gallium and arsenic from gallium arsenide semiconductor scraps

Abstract

In this paper, a novel technique for recovery of gallium and arsenic by thermal decomposition under vacuum is presented. The effects of distillation temperature on the volatilization behavior of each component were investigated. Theoretical calculations and experimental studies have shown that the method is feasible. The results show that under optimum conditions, highly pure Ga can be extracted with advantages over conventional techniques, including simple operation and environmental friendliness. For example, metallic gallium (purity > 99.99%) is obtained at 1273 K after 3 h under 3–8 Pa. Arsenic is obtained in the form of a elementary substance which could be preserved with relative ease.