Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers

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Abstract

While transition-metal dichalcogenide (TMD)-based moirématerials have been shown to host various correlated electronic phenomena, topological states have not been experimentally observed until now [T. Li et al., Quantum anomalous Hall effect from intertwined moirébands. arXiv [Preprint] (2021). https://arxiv.org/abs/2107.01796 (Accessed 5 July 2021)]. In this work, using first-principle calculations and continuum modeling, we reveal the displacement field-induced topologicalmoirébands in AB-stacked TMD heterobilayer MoTe2/WSe2. Valley-contrasting Chern bands with nontrivial spin texture are formed from interlayer hybridization between MoTe2 and WSe2 bands of nominally opposite spins. Our study establishes a recipe for creating topological bands in AB-stacked TMD bilayers in general, which provides a highly tunable platform for realizing quantum-spin Hall and interaction-induced quantum anomalous Hall effects.

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Zhang, Y., Devakul, T., & Fu, L. (2021). Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers. Proceedings of the National Academy of Sciences of the United States of America, 118(36). https://doi.org/10.1073/pnas.2112673118

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