The defect structure in a-plane GaN films grown on r-plane sapphire distinguishes itself significantly from the one found in c-plane GaN. Transmission electron microscopy studies oil a-plane GaN films grown by hydride vapour phase epitaxy reveal basal plane stacking faults, with a density in the range of 10(5) cm(-1) as a major planar defect in this type of growth. In addition, prismatic and pyramidal stacking faults were found lying in the {1 - 100} and {1 - 102) planes. The non-basal plane stacking faults are found in conjunction with nanopipe-like voids emerging at the film/substrate interface. It is suggested that the formation of the prismatic and pyramidal stacking faults is caused by interfacial strain during the early stage of growth.
CITATION STYLE
Kröger, R., Paskova, T., & Rosenauer, A. (2008). Interaction of Stacking Faults in Wurtzite a-Plane GaN on r-Plane Sapphire. In Microscopy of Semiconducting Materials 2007 (pp. 49–52). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8615-1_11
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