Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates

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Abstract

In this study, p-i-n InAs/GaSb type II superlattice photodiodes were directly grown on silicon substrates. The superlattice structures were grown monolithically on miscut Si substrates via a 10 nm AlSb nucleation layer. Interfacial misfit array technique was used to accommodate the large lattice mismatch between III-Sb epi-layers and Si. Atomic force microscopy and X-ray diffraction measurements revealed degraded material quality of type II superlattices grown on Si, compared with the sample grown on GaAs. Photoluminescence characterisation indicates comparable optical properties with about 39% deduction of peak intensity. Dark current measurements were also used to study the electrical properties of the samples.

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Burguete, C. G., Guo, D., Jurczak, P., Cui, F., Tang, M., Chen, W., … Wu, J. (2018). Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates. IET Optoelectronics, 12(1), 2–4. https://doi.org/10.1049/iet-opt.2017.0078

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