Electrical Photoconductivity of Ta2O5 Doped Based on Ba0,5S0,5TiO3 Thin Film

Abstract

Ba0,5Sr0,5TiO3 (BST) thin films were deposited on Si (100) p-type substrates using a chemical solution deposition (CSD) methode and doped with 0%, 2.5%, 5%, 7.5%, 10% tantalum pentaoxide (Ta2O5). Chemical Solution Deposition Methode (CSD) used the spin coating techniques with a rotational speed of 3000 rpm for 30 seconds. BST thin films annealed at a temperature 850 oC, then characterized by, LCR meter for electrical conductivity characterization. The result shows that electrical conductivity and dielectric constant value of BST and Ta2O5 doped based on BST (BSTT) thin films are in the range semiconductor materials. The electrical conductivity values obtained increased when the higher intensity light is used whereas resistance value could decrease if the light intensity is increased. Dielectric values obtained in the range from 7.29 to 16.11. The addition of tantalum pentaoxide dopant will increases electrical conductivity value of BST thin films. Electrical conductivity data show that BST thin films have shown the characteristic of the photoconductivity.