Growth and characterization of thin Cuphthalocyanine films on MgO(001) layer for organic light-emitting diodes

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Abstract

Surface morphology and thermal stability of Cu-phthalocyanine (CuPc) films grown on an epitaxially grown MgO(001) layer were investigated by using atomic force microscope and X-ray diffractometer. The (002) textured β phase of CuPc films were prepared at room temperature beyond the epitaxial MgO/Fe/MgO(001) buffer layer by the vacuum deposition technique. The CuPc structure remained stable even after post-annealing at 350°C for 1 h under vacuum, which is an important advantage of device fabrication. In order to improve the device performance, we investigated also current-voltage-luminescence characteristics for the new top-emitting organic light-emitting diodes with different thicknesses of CuPc layer. © 2012 Bae et al.

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Bae, Y. J., Lee, N. J., Kim, T. H., Cho, H., Lee, C., Fleet, L., & Hirohata, A. (2012). Growth and characterization of thin Cuphthalocyanine films on MgO(001) layer for organic light-emitting diodes. Nanoscale Research Letters, 7. https://doi.org/10.1186/1556-276X-7-650

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