Nonlithographic Fabrication and Physics of Nanowire and Nanodot Array Devices — Present and Future

  • Tager A
  • Routkevitch D
  • Haruyama J
  • et al.
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Abstract

A review with 32 refs. We discuss our results in what we believe to be the most promising of the existing direct fabrication methods; the electrochem. deposition of metals and semiconductors into porous anodic aluminum oxide films, which produces densely packed uniform 2-D nanowire arrays with diams. down to 8 nm or even less. We address the technol. of the array fabrication and present exptl. results on some effects ascribed to anisotropy, electron confinement, and room temp. single electron tunneling (SET) in nano-wire-based devices. We also present theor. results or the effect of interwire coupling on SET characteristics in such systems. An account is also given of the interesting possibilities in device applications and research which the new method and structures promise. [on SciFinder (R)]

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Tager, A. A., Routkevitch, D., Haruyama, J., Almawlawi, D., Ryan, L., Moskovits, M., & Xu, J. M. (1996). Nonlithographic Fabrication and Physics of Nanowire and Nanodot Array Devices — Present and Future. In Future Trends in Microelectronics (pp. 171–183). Springer Netherlands. https://doi.org/10.1007/978-94-009-1746-0_15

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