Abstract
We have developed an atomistic model for dopant diffusion in SiGe structures and we have implemented it in the kinetic Monte Carlo process simulator DADOS. The model takes into account (i) composition and stress effects on the diffusivity of interstitials, vacancies and dopants, (ii) SiGe interdiffusion, (iii) dopant segregation and (iv) the modifications of band-gap and charge levels. The model has been tested for B and Sb providing a very good agreement with available experimental data.
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CITATION STYLE
Castrillo, P., Pinacho, R., Rubio, J. E., Vega, L. M., & Jaraiz, M. (2007). Atomistic modeling of defect diffusion in SiGe. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 9–12). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_2
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