Abstract
A continuum model of phosphorus diffusion with germanium and carbon coimplant has been proposed and calibrated based on secondary ion mass spectroscopy (SIMS) profiles aiming at ultra shallow junction (USJ) formation in advanced CMOS technologies. The phosphorus diffusion behaviors are well captured by our model under various implant and annealing conditions, representing a significant step towards advanced n-type USJ formation technique using phosphorus and carbon coimplant for aggressively scaled CMOS technologies.
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CITATION STYLE
Huang, L. P., Ku, K. C., Sheu, Y. M., Nieh, C. F., Chen, C. H., Chang, H., … Diaz, C. H. (2007). Modeling and characterization of advanced phosphorus ultra shallow junction using germanium and carbon coimplants. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 33–36). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_8
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