In this paper, we report on our experimental observations of the resonant ionization of a phosphorus donor in silicon in a homogeneous electric field, which is expressed in the sudden rise of the conductivity of the sample at a low temperature when the electric field approaches the critical value of ∼3.2 MV m-1. The effect is discussed in terms of the field-induced interaction of the states using a simplified model based on the effective-mass theory. The results from our model are qualitatively similar to the previously published advanced model base, which is based on the first principles; this predicts the ionization thresholds at approximate fields of 2.45 and 3.25 MV m-1, the latter being in very good agreement with our experiment. The possibility of observing more than one resonance is also discussed. © 2014 The Royal Swedish Academy of Sciences.
CITATION STYLE
Ivanov, I. G., & Janzén, E. (2014). Resonant ionization of shallow donors in electric field. Physica Scripta, 89(8). https://doi.org/10.1088/0031-8949/89/8/085802
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