Spin valve effect in mn0.05ge0.95/p-si structure

Abstract

Polycrystalline Mn doped Ge films have been grown on p-type Si substrates. The films show hysteresis loop at room temperature (RT) and saturation magnetization increases with decrease in temperature. The presence of multi-magnetic phases having blocking temperature of *112 K and Curie temperature above RT is observed. Mn0.05 Ge0.95/p-Si heterostructure shows rectification property under forward and reverse bias like a semiconducting diode at RT and works like a spin valve at lower temperature. For a fixed forward bias and at a low temperature, huge change in junction magneto resistance (JMR) is observed.