Nanosilica suspensions for monocrystalline silicon wafers CMP surface for micro- and nanoelectronics

Abstract

Method of chemical-mechanical polishing (CMP) approach to production submicron and deep submicron levels. For monocrystalline silicon wafer by CMP, we have developed a suspension, containing solid phase, amorphous, spherical particles of nanosized aerosil. SiO2 particles are homogenously distribute in an alkaline medium. Removing material in CMP is the result of combined effects of chemically less active (etching) environment and mechanical particles of suspension and pad. In the study of the surface of silicon wafers after the final stage of the chemical- mechanical polishing using AFM the presence of surface defects and destruction of the surface layer is not established. Roughness of surface of monocrystalline silicon wafer (Ra) after polishing by silica suspension is 0.2-0.3 nm.