Magnetron sputtering for ZnO:Ga scintillation film production and its application research status in nuclear detection

Abstract

As a wide band-gap and direct transition semiconductor material, ZnO has good scintillation performance and strong radiation resistance, but it also has a serious self-absorption phenomenon that a ects its light output. After being doped with Ga, it can be used for the scintillator of ultra-fast scintillating detectors to detect X-ray, gamma, neutron, and charged particles with extremely fast response and high light output. Firstly, the basic properties, defects, and scintillation mechanism of ZnO crystals are introduced. Thereafter, magnetron sputtering, one of the most attractive production methods for producing ZnO:Ga film, is introduced including the principle of magnetron sputtering and its technical parameters’ influence on the performance of ZnO:Ga. Finally, ZnO:Ga film’s application research status is presented as a scintillation material in the field of radiation detection, and it is concluded that some problems need to be urgently solved for its wider application.