The results of simulation of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are presented. The research allowed to determine the optimal thickness of the AlGaN barrier layer for achieving high microwave capacity implementation.
CITATION STYLE
Gudkov, A. G., Shashurin, V. D., Vyuginov, V. N., Tikhomirov, V. G., Vidyakin, S. I., Agasieva, S. V., … Chizhikov, S. V. (2018). The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications. In Proceedings of the Scientific-Practical Conference “Research and Development - 2016” (pp. 273–280). Springer International Publishing. https://doi.org/10.1007/978-3-319-62870-7_30
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